Infineon and Sigenergy Collaborate to Power Next-Generation High-Efficiency Residential Solar-Storage Inverters with 1200V CoolSiC™ MOSFET G2

Infineon Technologies has announced a deeper collaboration with Sigenergy (Shanghai) Co., Ltd. to power next-generation residential solar-plus-storage inverters using Infineon’s latest 1200V CoolSiC™ MOSFET G2 discrete SiC technology. The partnership aims to elevate efficiency standards in home PV storage systems through device-level innovation and system co-design.

In the fast-growing global residential solar-storage market, efficiency and reliability remain the primary benchmarks of system performance. By deeply integrating Infineon’s new 1200V CoolSiC™ MOSFET G2 solution, Sigenergy has increased inverter efficiency by 0.6% while reducing overall system volume by 15%, achieving industry-leading performance. The use of Infineon’s advanced .XT interconnection technology further enhances thermal dissipation, ensuring long-term operational stability for home energy storage systems. From the world’s first “5-in-1 PV-storage-charging integrated unit” to successive generations of high-efficiency storage products, Sigenergy continues to drive innovation in the sector. The adoption of Infineon’s cutting-edge SiC technology in its residential inverters represents another major step forward in both performance and user experience, reinforcing Sigenergy’s leadership in the solar-storage industry.

Since its launch, Infineon’s new 1200V CoolSiC™ MOSFET G2 has attracted significant industry attention for three key advantages over the previous generation:

• Higher efficiency: 25% lower switching losses and a 10% reduction in total power losses, enabling further system-level efficiency gains.

• Enhanced thermal management: Improved heat dissipation enabled by Infineon’s .XT interconnection technology, ensuring stable operation even under high-temperature conditions.

• Greater reliability: A trench gate design and tightly controlled manufacturing process result in a more concentrated VGS(th) distribution. Combined with a negative temperature coefficient in transfer characteristics, this simplifies paralleling and improves overall device robustness.

Infineon has also introduced a 1400V CoolSiC™ MOSFET series in a high-creepage TO-247-4 package, expanding application possibilities across PV inverters, EV chargers, and industrial motor drives.

Cheng Jiayu, Senior Vice President and Head of Industrial & Infrastructure Business Greater China at Infineon, together with Liao Mingsong, Head of Distribution and EMS Management Greater China, emphasized that Infineon’s more than 20 years of expertise in SiC technology—from materials and chip design to manufacturing and packaging—enables the company to deliver high-performance, reliable SiC power solutions across diverse applications. They noted that Sigenergy, as one of the fastest-growing companies in the global energy storage sector and a market leader in distributed storage systems across multiple overseas markets, shares Infineon’s commitment to innovation and reliability. This strong partnership is opening new opportunities for SiC devices in solar-storage applications while contributing to the global energy transition.

Zhang Xianmiao, President of Sigenergy, stated that since its founding, the company has focused on innovation at the intersection of AI and renewable energy, maintaining strict quality standards throughout design, material selection, and testing. He highlighted that exceptional system performance relies on reliable core components, and Infineon’s deep expertise and continuous innovation in SiC power devices align perfectly with Sigenergy’s pursuit of high efficiency and reliability. Going forward, Sigenergy will continue to collaborate closely with Infineon to develop safer, more efficient, and more sustainable energy solutions, accelerating the industry’s progress toward a zero-carbon future.